triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice 30-38 ghz balanced low noise amplifier TGA4511-EPU key features ? 0.15 um phemt technology ? 15 dbm nominal pout @ 35 ghz ? 17 db nominal gain @ 35 ghz ? 2.5 db noise figure @ 35 ghz ? bias conditions: 3.5v, 110 ma ? chip dimensions: 2.7mm x 1.8mm primary applications ? point-to-point radio ? point-to-multipoint radio preliminary measured data 10 12 14 16 18 20 22 26 28 30 32 34 36 38 40 fre q uenc y ( ghz ) gain (db) 0 1 2 3 4 5 26 28 30 32 34 36 38 40 fre q uenc y ( ghz ) noise figure (db) bias conditions: vd = 3.5 v, id = 110 ma
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice table i maximum ratings 5/ symbol parameter value notes v + positive supply voltage 6 v 4/ v - negative supply voltage range -2 to 0 v i + positive supply current (quiescent) 400 ma 4/ | i g | gate supply current 40 ma p in input continuous wave power tbd p d power dissipation tbd 3/ 4 / t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this bias condition with a base plate temperature of tbd, the median life is reduced from tbd to tbd. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device. table ii electrical characteristics (ta = 25 o c 5 o c) parameter typical units drain operating 3.5 v quiescent current 110 ma small signal gain 17 db input return loss (linear small signal) 18 db output return loss (linear small signal 18 db output power @ 1 db compression gain 15 dbm third order intercept point @ -12 dbm @ 35ghz 25 dbm
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4511-EPU preliminary measured data bias conditions: vd = 3.5 v, id = 110 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 26 28 30 32 34 36 38 40 frequency (ghz) noise figure (db) 10 11 12 13 14 15 16 17 18 19 20 21 22 26 28 30 32 34 36 38 40 frequency (ghz) gain (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4511-EPU preliminary measured data bias conditions: vd = 3.5 v, id = 110 ma -40 -35 -30 -25 -20 -15 -10 -5 0 26 28 30 32 34 36 38 40 frequency (ghz) input return loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 26 28 30 32 34 36 38 40 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA4511-EPU 0 2 4 6 8 10 12 14 16 18 20 30 31 32 33 34 35 36 37 38 frequency (ghz ) pout @ p1db (dbm) preliminary measured data toi at -12 dbm input power (p1db - 10 db) 15 17 19 21 23 25 27 29 33 35 37 frequency (ghz) third order intercept point (dbm) bias conditions: vd = 3.5 v, id = 110 ma 12
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGA4511-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice chip assembly diagram v g TGA4511-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. rf in rf out v g v d v d
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGA4511-EPU
|
